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International Rectifier Irf7828Trpbf
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International Rectifier Irf7828Trpbf
Newark
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MOSFET; Transistor Polarity:N Channel; Power Dissipation:2.5W; Drain-Source Breakdown Voltage:30V; Package/Case:8-SOI C; Drain Source On Resistance @ 4.5V:12.5mohm; Gate-To-Drain Charge:2.9C; Leaded Process Compatible:Yes RoHS Compliant: Yes
International Rectifier Irf6217
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International Rectifier Irf6217
Newark
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MOSFET; Transistor Polarity:P Channel; Power Dissipation:2.5W; Drain-Source Breakdown Voltage:-150V; Continuous Drain Current, Id:-0.7A; Package/Case:8-SOI C; Drain Source On Resistance @ 10V:2400mohm; Gate-To-Drain Charge:2.8nC RoHS Compliant: No
International Rectifier Irf510Pbf
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International Rectifier Irf510Pbf
Newark
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MOSFET; Transistor Polarity:N Channel; Power Dissipation:43W; Drain-Source Breakdown Voltage:100V; Continuous Drain Current, Id:5.6A; Package/Case:TO-22 0AB; Drain Source On Resistance @ 10V:540mohm; Gate-To-Drain Charge:2.5nC RoHS Compliant: Yes
International Rectifier Irf510
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International Rectifier Irf510
Newark
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MOSFET; Transistor Polarity:N Channel; Power Dissipation:43W; Drain-Source Breakdown Voltage:100V; Continuous Drain Current, Id:5.6A; Package/Case:TO-22 0AB; Drain Source On Resistance @ 10V:540mohm; Gate-To-Drain Charge:2.5nC RoHS Compliant: No
International Rectifier Irfr120Ztrpbf
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International Rectifier Irfr120Ztrpbf
Newark
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MOSFET; Transistor Polarity:N Channel; Power Dissipation:35W; Drain-Source Breakdown Voltage:100V; Package/Case:D-PAK ; Continuous Drain Current - 25 Deg C:8.7A; Drain Source On Resistance @ 10V:190mohm; Gate-To-Drain Charge:3.1nC RoHS Compliant: Yes
International Rectifier Irf710Pbf
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International Rectifier Irf710Pbf
Newark
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MOSFET; Transistor Polarity:N Channel; Power Dissipation:36W; Drain-Source Breakdown Voltage:400V; Continuous Drain Current, Id:2A; Package/Case:TO-22 0AB; Drain Source On Resistance @ 10V:3600mohm; Gate-To-Drain Charge:5.7nC RoHS Compliant: Yes
International Rectifier Irl620Pbf
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International Rectifier Irl620Pbf
Newark
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MOSFET; Transistor Polarity:N Channel; Power Dissipation:50W; Drain-Source Breakdown Voltage:200V; Continuous Drain Current, Id:5.2A; Package/Case:TO-22 0AB; Drain Source On Resistance @ 4.5V:1000mohm; Gate-To-Drain Charge:6.4nC RoHS Compliant: Yes
International Rectifier Irfl110Pbf
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International Rectifier Irfl110Pbf
Newark
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MOSFET; Transistor Polarity:N Channel; Power Dissipation:2W; Drain-Source Breakdown Voltage:100V; Continuous Drain Current, Id:1.5A; Package/Case:SOT-2 23; Drain Source On Resistance @ 10V:540mohm; Gate-To-Drain Charge:2.5nC RoHS Compliant: Yes
International Rectifier Irfz14Pbf
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International Rectifier Irfz14Pbf
Newark
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MOSFET; Transistor Polarity:N Channel; Power Dissipation:43W; Drain-Source Breakdown Voltage:60V; Continuous Drain Current, Id:10A; Package/Case:TO-22 0AB; Drain Source On Resistance @ 10V:200mohm; Gate-To-Drain Charge:3.9nC RoHS Compliant: Yes
International Rectifier Irfl024Npbf
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International Rectifier Irfl024Npbf
Newark
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MOSFET; Transistor Polarity:N Channel; Power Dissipation:2.1W; Drain-Source Breakdown Voltage:55V; Continuous Drain Current, Id:2.8A; Package/Case:SOT-2 23; Drain Source On Resistance @ 10V:75mohm; Gate-To-Drain Charge:5.1nC RoHS Compliant: Yes
International Rectifier Irfr120Ztrlpbf
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International Rectifier Irfr120Ztrlpbf
Newark
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MOSFET; Transistor Polarity:N Channel; Power Dissipation:35W; Drain-Source Breakdown Voltage:100V; Package/Case:D-PAK ; Continuous Drain Current - 25 Deg C:8.7A; Drain Source On Resistance @ 10V:190mohm; Gate-To-Drain Charge:3.1nC RoHS Compliant: Yes
International Rectifier Irfz14
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International Rectifier Irfz14
Newark
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MOSFET; Transistor Polarity:N Channel; Power Dissipation:43W; Drain-Source Breakdown Voltage:60V; Continuous Drain Current, Id:10A; Package/Case:TO-22 0AB; Drain Source On Resistance @ 10V:200mohm; Gate-To-Drain Charge:3.9nC RoHS Compliant: No
International Rectifier Irf610Pbf
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International Rectifier Irf610Pbf
Newark
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MOSFET; Transistor Polarity:N Channel; Power Dissipation:36W; Drain-Source Breakdown Voltage:200V; Continuous Drain Current, Id:3.3A; Package/Case:TO-22 0AB; Drain Source On Resistance @ 10V:1500mohm; Gate-To-Drain Charge:3nC RoHS Compliant: Yes
International Rectifier Irf620Pbf
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International Rectifier Irf620Pbf
Newark
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MOSFET; Transistor Polarity:N Channel; Power Dissipation:50W; Drain-Source Breakdown Voltage:200V; Continuous Drain Current, Id:5.2A; Package/Case:TO-22 0AB; Drain Source On Resistance @ 10V:800mohm; Gate-To-Drain Charge:5.3nC RoHS Compliant: Yes
International Rectifier Irfz34Npbf
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International Rectifier Irfz34Npbf
Newark
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MOSFET; Transistor Polarity:N Channel; Power Dissipation:56W; Drain-Source Breakdown Voltage:55V; Continuous Drain Current, Id:29A; Package/Case:TO-22 0AB; Drain Source On Resistance @ 10V:40mohm; Gate-To-Drain Charge:9.3nC RoHS Compliant: Yes
International Rectifier Irf7821Trpbf
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International Rectifier Irf7821Trpbf
Newark
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MOSFET; Transistor Polarity:N Channel; Power Dissipation:2.5W; Drain-Source Breakdown Voltage:30V; Package/Case:8-SOI C; Drain Source On Resistance @ 10V:9.1mohm; Drain Source On Resistance @ 4.5V:12.5mohm; Gate-To-Drain Charge:2.9C RoHS Compliant: Yes
International Rectifier Irfr9310Pbf
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International Rectifier Irfr9310Pbf
Newark
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MOSFET; Transistor Polarity:P Channel; Power Dissipation:50W; Drain-Source Breakdown Voltage:-400V; Continuous Drain Current, Id:-1.8A; Package/Case:D-PAK ; Drain Source On Resistance @ 10V:7000mohm; Gate-To-Drain Charge:3.3nC RoHS Compliant: Yes
International Rectifier Irfu5505Pbf
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International Rectifier Irfu5505Pbf
Newark
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MOSFET; Transistor Polarity:P Channel; Power Dissipation:57W; Drain-Source Breakdown Voltage:-55V; Continuous Drain Current, Id:-18A; Package/Case:I-PAK ; Drain Source On Resistance @ 10V:110mohm; Gate-To-Drain Charge:10nC RoHS Compliant: Yes
International Rectifier Irfr9014
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International Rectifier Irfr9014
Newark
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MOSFET; Transistor Polarity:P Channel; Power Dissipation:25W; Drain-Source Breakdown Voltage:-60V; Continuous Drain Current, Id:-5.1A; Package/Case:D-PAK ; Drain Source On Resistance @ 10V:500mohm; Gate-To-Drain Charge:3.4nC RoHS Compliant: No
International Rectifier Irfr1N60Apbf
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International Rectifier Irfr1N60Apbf
Newark
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MOSFET; Transistor Polarity:N Channel; Power Dissipation:36W; Drain-Source Breakdown Voltage:600V; Continuous Drain Current, Id:1.4A; Package/Case:D-PAK ; Drain Source On Resistance @ 10V:7000mohm; Gate-To-Drain Charge:5.4nC RoHS Compliant: Yes
International Rectifier Irfr9014Pbf
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International Rectifier Irfr9014Pbf
Newark
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MOSFET; Transistor Polarity:P Channel; Power Dissipation:25W; Drain-Source Breakdown Voltage:-60V; Continuous Drain Current, Id:-5.1A; Package/Case:D-PAK ; Drain Source On Resistance @ 10V:500mohm; Gate-To-Drain Charge:3.4nC RoHS Compliant: Yes
International Rectifier Irll110Pbf
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International Rectifier Irll110Pbf
Newark
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MOSFET; Transistor Polarity:N Channel; Power Dissipation:3.1W; Drain-Source Breakdown Voltage:100V; Continuous Drain Current, Id:1.5A; Package/Case:SOT-2 23; Drain Source On Resistance @ 4.5V:760mohm; Gate-To-Drain Charge:2.2nC RoHS Compliant: Yes
International Rectifier Irfl014N
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International Rectifier Irfl014N
Newark
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MOSFET; Transistor Polarity:N Channel; Power Dissipation:2.1W; Drain-Source Breakdown Voltage:55V; Continuous Drain Current, Id:1.9A; Package/Case:SOT-2 23; Drain Source On Resistance @ 10V:16mohm; Gate-To-Drain Charge:3.3nC RoHS Compliant: No
International Rectifier Irfl014Npbf
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International Rectifier Irfl014Npbf
Newark
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MOSFET; Transistor Polarity:N Channel; Power Dissipation:2.1W; Drain-Source Breakdown Voltage:55V; Continuous Drain Current, Id:1.9A; Package/Case:SOT-2 23; Drain Source On Resistance @ 10V:16mohm; Gate-To-Drain Charge:3.3nC RoHS Compliant: Yes
International Rectifier Irfl9110Pbf
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International Rectifier Irfl9110Pbf
Newark
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MOSFET; Transistor Polarity:P Channel; Power Dissipation:2W; Drain-Source Breakdown Voltage:-100V; Continuous Drain Current, Id:-1.1A; Package/Case:SOT-2 23; Drain Source On Resistance @ 10V:1200mohm; Gate-To-Drain Charge:2.7nC RoHS Compliant: Yes
International Rectifier Irfl014Pbf
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International Rectifier Irfl014Pbf
Newark
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MOSFET; Transistor Polarity:N Channel; Power Dissipation:2W; Drain-Source Breakdown Voltage:60V; Continuous Drain Current, Id:2.7A; Package/Case:SOT-2 23; Drain Source On Resistance @ 10V:200mohm; Gate-To-Drain Charge:3.9nC RoHS Compliant: Yes
International Rectifier Irf520Npbf
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International Rectifier Irf520Npbf
Newark
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MOSFET; Transistor Polarity:N Channel; Power Dissipation:48W; Drain-Source Breakdown Voltage:100V; Continuous Drain Current, Id:9.7A; Package/Case:TO-22 0AB; Drain Source On Resistance @ 10V:200mohm; Gate-To-Drain Charge:7.3nC RoHS Compliant: Yes
International Rectifier Irfr3704Z
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International Rectifier Irfr3704Z
Newark
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MOSFET; Transistor Polarity:N Channel; Power Dissipation:48W; Drain-Source Breakdown Voltage:20V; Package/Case:D-PAK ; Drain Source On Resistance @ 10V:8.4mohm; Drain Source On Resistance @ 4.5V:11.4mohm; Gate-To-Drain Charge:2.7C RoHS Compliant: No
International Rectifier Irll024Zpbf
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International Rectifier Irll024Zpbf
Newark
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MOSFET; Transistor Polarity:N Channel; Power Dissipation:2.8W; Drain-Source Breakdown Voltage:55V; Package/Case:SOT-2 23; Continuous Drain Current - 25 Deg C:5A; Drain Source On Resistance @ 10V:100mohm; Gate-To-Drain Charge:4nC RoHS Compliant: Yes
International Rectifier Irf7413Zpbf
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International Rectifier Irf7413Zpbf
Newark
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MOSFET; Transistor Polarity:N Channel; Power Dissipation:2.5W; Drain-Source Breakdown Voltage:30V; Package/Case:8-SOI C; Drain Source On Resistance @ 10V:10mohm; Drain Source On Resistance @ 4.5V:13mohm; Gate-To-Drain Charge:3C RoHS Compliant: Yes
International Rectifier Irf7828Pbf
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International Rectifier Irf7828Pbf
Newark
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MOSFET; Transistor Polarity:N Channel; Power Dissipation:2.5W; Drain-Source Breakdown Voltage:30V; Package/Case:8-SOI C; Drain Source On Resistance @ 4.5V:12.5mohm; Gate-To-Drain Charge:2.9C; Leaded Process Compatible:Yes RoHS Compliant: Yes
International Rectifier Irf7807Zpbf
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International Rectifier Irf7807Zpbf
Newark
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MOSFET; Transistor Polarity:N Channel; Power Dissipation:2.5W; Drain-Source Breakdown Voltage:30V; Package/Case:8-SOI C; Drain Source On Resistance @ 10V:13.8mohm; Drain Source On Resistance @ 4.5V:18.2mohm; Gate-To-Drain Charge:2.7C RoHS Compliant: Yes
International Rectifier Irfl210
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International Rectifier Irfl210
Newark
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MOSFET; Transistor Polarity:N Channel; Power Dissipation:2W; Drain-Source Breakdown Voltage:200V; Continuous Drain Current, Id:0.96A; Package/Case:SOT-2 23; Drain Source On Resistance @ 10V:1500mohm; Gate-To-Drain Charge:3nC RoHS Compliant: No
International Rectifier Irfl210Pbf
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International Rectifier Irfl210Pbf
Newark
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MOSFET; Transistor Polarity:N Channel; Power Dissipation:2W; Drain-Source Breakdown Voltage:200V; Continuous Drain Current, Id:0.96A; Package/Case:SOT-2 23; Drain Source On Resistance @ 10V:1500mohm; Gate-To-Drain Charge:3nC RoHS Compliant: Yes
International Rectifier Irfr210Pbf
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International Rectifier Irfr210Pbf
Newark
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MOSFET; Transistor Polarity:N Channel; Power Dissipation:25W; Drain-Source Breakdown Voltage:200V; Continuous Drain Current, Id:2.6A; Package/Case:D-PAK ; Drain Source On Resistance @ 10V:1500mohm; Gate-To-Drain Charge:3nC RoHS Compliant: Yes
International Rectifier Irfu9024Npbf
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International Rectifier Irfu9024Npbf
Newark
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MOSFET; Transistor Polarity:P Channel; Power Dissipation:38W; Drain-Source Breakdown Voltage:-55V; Continuous Drain Current, Id:-11A; Package/Case:I-PAK ; Drain Source On Resistance @ 10V:175mohm; Gate-To-Drain Charge:6.7nC RoHS Compliant: Yes
International Rectifier Irf9510S
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International Rectifier Irf9510S
Newark
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MOSFET; Transistor Polarity:P Channel; Power Dissipation:43W; Drain-Source Breakdown Voltage:-100V; Continuous Drain Current, Id:-4A; Package/Case:D2-PA K; Drain Source On Resistance @ 10V:1200mohm; Gate-To-Drain Charge:2.7nC RoHS Compliant: No
International Rectifier Irfr210
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International Rectifier Irfr210
Newark
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MOSFET; Transistor Polarity:N Channel; Power Dissipation:25W; Drain-Source Breakdown Voltage:200V; Continuous Drain Current, Id:2.6A; Package/Case:D-PAK ; Drain Source On Resistance @ 10V:1500mohm; Gate-To-Drain Charge:3nC RoHS Compliant: No
International Rectifier Irfz24Npbf
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International Rectifier Irfz24Npbf
Newark
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MOSFET; Transistor Polarity:N Channel; Power Dissipation:45W; Drain-Source Breakdown Voltage:55V; Continuous Drain Current, Id:17A; Package/Case:TO-22 0AB; Drain Source On Resistance @ 10V:70mohm; Gate-To-Drain Charge:5.1nC RoHS Compliant: Yes
International Rectifier Irfr4105Pbf
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International Rectifier Irfr4105Pbf
Newark
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MOSFET; Transistor Polarity:N Channel; Power Dissipation:48W; Drain-Source Breakdown Voltage:55V; Continuous Drain Current, Id:27A; Package/Case:D-PAK ; Drain Source On Resistance @ 10V:45mohm; Gate-To-Drain Charge:9.3nC RoHS Compliant: Yes

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